| PART |
Description |
Maker |
| PC28F256P30BFA JS28F256P30BFE PC28F256P30BFE JS28F |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
Micron Technology
|
| N25Q512A13GSF40F N25Q512A13GSFA0F N25Q512A13G1240 |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| N25Q256A13E1240E N25Q256A13EF840E |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A
|
Micron Technology
|
| N25Q064A13ESF40G N25Q064A13ESFA0F N25Q064A13E1240F |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
64Mb, 3V, Multiple I/O Serial Flash Memory
64Mb, 3V, Multiple I/O Serial Flash Memory
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array
300 usable gate, 1.5 micron, CMOS gate array
700 usable gate, 1.5 micron, CMOS gate array
4 K usable gate, 1.0 micron, CMOS gate array
500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
| CA3306 CA3306A CA3306C CA3306CD CA3306CE CA3306CM |
6-Bit, 15 MSPS, Flash A/D Converters 1-CH 6-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDIP18
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| M29W256GL M29W256GH |
Parallel NOR Flash Embedded Memory
|
Micron Technology
|
| ADC04R01 |
1-CH 4-BIT FLASH METHOD ADC, PARALLEL ACCESS
|
ON SEMICONDUCTOR
|
| W29GL032C |
32M-BIT 3.0-VOLT PARALLEL FLASH MEMORY
|
Winbond
|
| TDC1058B6V |
8-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDIP28
|
RAYTHEON SEMICONDUCTOR
|
